Click to expand full text
2N4296 2N4298 2N4299
SILICON NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4296, 2N4298, and 2N4299 devices are silicon NPN power transistors designed for power amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC
2N4296 2N4298 2N4299 350 500 350 250 350 250 4.0 1.0 250 20 -65 to +175 7.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N4296
2N4298
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICEV
VCE=150V, VBE=1.
2N4298 Datasheet
