2N5337 Overview
Description
The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed. MARKING: FULL PART NUMBER TO-39 CASE SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC 2N5336 2N5338 2N5337 2N5339 80 100 80 100 6.0 5.0 1.0 6.0 -65 to +200 29 2N5337 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=Rated VCBO ICEV VCE=75V, VEB=1.5V ICEV VCE=90V, VEB=1.5V ICEV VCE=75V, VEB=1.5V, TC=150°C ICEV VCE=90V, VEB=1.5V, TC=150.
