Datasheet Details
| Part number | 2N5336 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 342.82 KB |
| Description | NPN SILICON TRANSISTOR |
| Datasheet | 2N5336_CentralSemiconductorCorp.pdf |
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Overview: 2N5336 2N5338 2N5337 2N5339 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i .
| Part number | 2N5336 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 342.82 KB |
| Description | NPN SILICON TRANSISTOR |
| Datasheet | 2N5336_CentralSemiconductorCorp.pdf |
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: The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.
MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC 2N5336 2N5338 2N5337 2N5339 80 100 80 100 6.0 5.0 1.0 6.0 -65 to +200 29 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5336 2N5337 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=Rated VCBO ICEV VCE=75V, VEB=1.5V ICEV VCE=90V, VEB=1.5V ICEV VCE=75V, VEB=1.5V, TC=150°C ICEV VCE=90V, VEB=1.5V, TC=150°C ICEO VCE=75V ICEO VCE=90V IEBO VEB=6.0V BVCEO IC=50mA VCE(SAT) IC=2.0A, IB=200mA VCE(SAT) IC=5.0A, IB=500mA VBE(SAT) IC=2.0A, IB=200mA VBE(SAT) IC=5.0A, IB=500mA hFE VCE=2.0V, IC=500mA (2N5336, 2N5338) hFE VCE=2.0V, IC=500mA (2N5337, 2N5339) hFE VCE=2.0V, IC=2.0A (2N5336, 2N5338) hFE VCE=2.0V, IC=2.0A (2N5337, 2N5339) hFE VCE=2.0V, IC=5.0A (2N5336, 2N5338) hFE VCE=2.0V, IC=5.0A (2N5337, 2N5339) 80 30 60 30 60 20 40 10 10 1.0 100 100 0.7 1.2 1.2 1.8 120 240 - 2N5338 2N5339 MIN MAX - 10 -- 10 -- 1.0 -- 100 - 100 100 - 0.7 - 1.2 - 1.2 - 1.8 30 60 30 120 60 240 20 40 - UNITS V V V A A W °C °C/W UNITS μA μA μA mA mA μA μA μA V V V V V R1 (4-April 2014) 2N5336 2N5338 2N5337 2N5339 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) 2N5336 2N5338 2N5337 2N5339 SYMBOL TEST CONDITIONS MIN MAX MIN MAX fT VCE=10V, IC=500mA, f=10MHz 30 - 30 - Cob VCB=10V, IE=0, f=100kHz - 250 - 250 Cib VBE=2.0V, IC=0, f=100kHz - 1.0
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5336 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| 2N5337 | NPN SILICON TRANSISTOR |
| 2N5338 | NPN SILICON TRANSISTOR |
| 2N5339 | NPN SILICON TRANSISTOR |
| 2N5022 | PNP SILICON TRANSISTOR |
| 2N5023 | PNP SILICON TRANSISTOR |
| 2N5058 | NPN SILICON TRANSISTOR |
| 2N5059 | NPN SILICON TRANSISTOR |
| 2N5183 | Small Signal Transistors |
| 2N5190 | NPN SILICON POWER TRANSISTOR |
| 2N5191 | NPN SILICON POWER TRANSISTOR |