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2N5333 Datasheet PNP Silicon Power Transistor

Manufacturer: Central Semiconductor

Overview: 2N5333 PNP SILICON POWER TRANSISTOR CentralTM Semiconductor Corp.

General Description

: The CENTRAL SEMICONDUCTOR 2N5333 is a PNP Silicon Power Transistor manufactured by the epitaxial planar process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications.

TO-39 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (tp < 0.3ms) Continuous Base Current Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA 100 80 6.0 2.0 5.0 1.0 1.0 -65 to +200 175 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICES VCE=90V ICES VCE=50V (TC=150°C) ICEO VCE=40V IEBO VEB=4.0V IEBO VEB=6.0V BVCEO IC=30mA 80 VCE(SAT) IC=1.0A, IB=100mA VCE(SAT) IC=2.0A, IB=400mA VBE

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