2N5333 - SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N5333
Manufacturer	TT Electronics
File Size	86.22 KB
Description	SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR
Datasheet	2N5333 Datasheet

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SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR 2N5333 • Low Saturation Voltage • Fast Switching • Hermetic TO39 Metal package. • For power amplifier and high speed Switching Applications • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -100V VCEO Collector – Emitter Voltage -80V VEBO Emitter – Base Voltage -6V IC Continuous Collector Current -2A ICM Peak Collector Current -5A IB Base Current -1A IE Emitter Current -3A PD Total Power Dissipation at TA = 25°C 1.0W Derate Above 25°C 0.