TT 2N5333
SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR
| Part No. | 2N5333 |
|---|---|
| Datasheet | 2N5333 Download |
| Manufacturer |  TT |
| Description | SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● High Reliability Screening Options AvailableABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -100V VCEO Collector – Emitter Voltage -80V VEBO Emitter – Base Voltage -6V IC Continuous Collector Current -2A ICM Peak Collector Current -5A IB Base Current -1A IE Emitter Current -3A PD Total Power Dissipation at TA = 25°C 1.0W Derate Above 25°C 0.15W/°C PD Total Power Dissipation at TC = 100°C 15W TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C Lead Temperature (1/16 Inch from Case for 10 seconds) 260°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max. Units 6.66 °C/W 175 °C/W Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
