CBCP69 Datasheet | Central Semiconductor

CBCP68 NPN CBCP69 PNP SILICON PLEMENTARY SMALL SIGNAL TRANSISTORS Central Semiconductor DESCRIPTION: Corp. The CENTRAL SEMICONDUCTOR CBCP68, CBCP69 types are plementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. SOT-223 CASE MAXIMUM RATINGS (TA=25o C) SYMBOL VCES VCEO VEBO IC ICM IB IBM PD TJ,Tstg QJA UNITS V V V A A m A m A W o C o C/W Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current-Peak Base Current Base Current-Peak Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 25 20 5.0 1.0 2.0 100 200 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS (TA=25o C unless otherwise noted) SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) VBE(ON) h FE TEST CONDITIONS VCB=25V VCB=25V, TA=150o C VEB=5.0V IC=10m A IC=10m A IE=1.0m A IC=1.0A, IB=100m A VCE=10V, IC=5.0m A VCE=1.0V, IC=1.0A VCE=10V, IC=5.0m A MIN TYP MAX 10 1.0 10 UNITS m A m A m A V V V V V V 25 20 5.0 0.5 0.6 1.0 50 SYMBOL h FE h FE f T Cob TEST CONDITIONS VCE=1.0V, IC=500m A VCE=1.0V, IC=1.0A VCE=5.0V, IC=10m A, f=20MHz VCB=5.0V, IE=0, F=450k Hz MIN 85 60 65 MAX 375 UNITS MHz p F All dimensions in inches (mm). LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER...