Datasheet Details
| Part number | CBCX69 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 99.77 KB |
| Description | SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |
| Datasheet | CBCX69_CentralSemiconductorCorp.pdf |
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Overview: CBCX68 CBCX69 SILICON PLEMENTARY SMALL SIGNAL TRANSISTORS Central.
| Part number | CBCX69 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 99.77 KB |
| Description | SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |
| Datasheet | CBCX69_CentralSemiconductorCorp.pdf |
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: TM Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CBCX68, CBCX69 types are plementary silicon transistor manufactured by epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.
SOT-89 CASE MAXIMUM RATINGS (TA=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current-Peak Base Current Base Current Peak Power Dissipation Operating and Storage Junction Temperature Thermal Temperature SYMBOL VCES VCEO VEBO IC ICM IB IBM PD TJ,Tstg ΘJA 25 20 5.0 1.0 2.0 100 200 1.2 -65 to +150 104 UNITS V V V A A mA mA W °C °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=25V ICBO VCB=25V, TA=150°C IEBO VEB=5.0V BVCBO IC=10µA 25 BVCEO IC=10mA 20 BVEBO IE=1.0µA 5.0 VCE(SAT) IC=1.0A, IB=100mA VBE(ON) VCE=10V,IC=5.0mA 0.6 VBE(ON) VCE=1.0V, IC=1.0A hFE VCE=10V,IC=500mA 50 hFE VCE=1.0,IC=500mA 85 hFE VCE=1.0V, IC=1.0A 60 fT VCE=5.0V,IC=10mA, f=20MHz 65 MAX 100 10 0.5 1.0 375 UNITS nA µA µA V V V V V V MHz R4 ( 19-December 2001) Central TM Semiconductor Corp.
| Part Number | Description |
|---|---|
| CBCX68 | SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |
| CBCP68 | SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |
| CBCP69 | SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |