CMPD1001 Datasheet | Central Semiconductor

DESCRIPTION : Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001S CMPD1001A SINGLE DUAL, IN SERIES DUAL, MON ANODE MARKING CODE: L20 MARKING CODE: L21 MARKING CODE: L22 MAXIMUM RATINGS (TA=25o C) SYMBOL VR IF IFRM IRRM IFSM IFSM PD TJ,Tstg ΘJA UNITS V m A m A m A m A m A m W o C o C/W Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Forward Surge Current, tp=1 µs Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 90 250 600 600 6000 1000 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25o C unless otherwise noted) SYMBOL BVR IR IR VF TEST CONDITIONS IR=100 µA VR=90V VR=90V, TA=150o C IF=10m A MIN 90 MAX 100 100 0.75 UNIT V n A µA V SYMBOL VF VF VF VF CT trr TEST CONDITIONS MIN IF=50m A IF=100m A IF=200m A IF=400m A VR=0, f=1 MHz IF=IR=30m A, RECOV. TO 3.0m A, RL=100Ω MAX 0.84 0.90 1.00 1.25 35 50 UNIT V V V V p F ns All dimensions in inches (mm). NO CONNECTION C1 A2 C1 C2 A1, C2 CMPD1001S A1, A2 CMPD1001A R2...