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CMPD1001S Datasheet High Current Switching Diode

Manufacturer: Central Semiconductor

Overview: CMPD1001 CMPD1001A CMPD1001S HIGH CURRENT SWITCHING DIODE Central.

General Description

: TM Semiconductor Corp.

The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability.

SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001S CMPD1001A SINGLE DUAL, IN SERIES DUAL, COMMON ANODE MARKING CODE: L20 MARKING CODE: L21 MARKING CODE: L22 MAXIMUM RATINGS (TA=25oC) SYMBOL VR IF IFRM IRRM IFSM IFSM PD TJ,Tstg ΘJA UNITS V mA mA mA mA mA mW oC oC/W Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Forward Surge Current, tp=1 µs Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 90 250 600 600 6000 1000 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL BVR IR IR VF TEST CONDITIONS IR=100 µA VR=90V VR=90V, TA=150oC IF=10mA MIN 90 MAX 100 100 0.75 UNIT V nA µA V 130 SYMBOL VF VF VF VF CT trr TEST CONDITIONS MIN IF=50mA IF=100mA IF=200mA IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV.

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