CMST2907A
CMST2907A is SUPER-MINI PNP SILICON TRANSISTOR manufactured by Central Semiconductor.
DESCRIPTION
:
Semiconductor Corp.
SUPER-MINI PNP SILICON TRANSISTOR
SUPER mini
The CENTRAL SEMICONDUCTOR CMST2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general purpose and switching applications.
SOT-323 CASE
MAXIMUM RATINGS: (TA=25o C) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA UNITS V V V m A m W o C o C/W
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
60 60 5.0 600 250 -65 to +150 500
ELECTRICAL CHARACTERISTICS: (TA=25o C unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) h FE h FE TEST CONDITIONS VCB=50V VCB=50V, TA=125o C VCE=30V, VBE=0.5V IC=10µA IC=10m A IE=10µA IC=150m A, IB=15m A IC=500m A, IB=50m A IC=150m A, IB=15m A IC=500m A, IB=50m A VCE=10V, IC=0.1m A VCE=10V, IC=1.0m A MIN MAX 10 10 50 UNITS n A µA n A V V V V V V V
60 60 5.0 0.4 1.6 1.3 2.6 75 100
SYMBOL h FE h FE h FE f T Cob Cib ton td tr toff ts tf
TEST CONDITIONS VCE=10V, IC=10m A VCE=10V, IC=150m A VCE=10V, IC=500m A VCE=20V, IC=50m A, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5, IC=150m A, IB1=15m A VCC=30V, VBE=0.5, IC=150m A, IB1=15m A VCC=30V, VBE=0.5, IC=150m A, IB1=15m A VCC=6.0V, IC=150m A, IB1=IB2=15m A VCC=6.0V, IC=150m A, IB1=IB2=15m A VCC=6.0V, IC=150m A, IB1=IB2=15m A
MIN 100 100 50 200
MAX 300
UNITS
8.0 30 45 10 40 100 80 30
MHz p F p F ns ns ns ns ns ns
All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
R2...
