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CMSD2004S Datasheet High Voltage Switching Diode

Manufacturer: Central Semiconductor

Overview: CMSD2004S SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR CMSD2004S type is a dual, in series silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.

MARKING CODE: B6D SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 300 300 200 225 625 4.0 1.0 275 -65 to +150 455 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR BVR VF CT trr VR=240V VR=240V, TA=150°C IR=100μA IF=100mA VR=0, f=1.0MHz IF=IR=30mA, Irr=3.0mA, RL=100Ω

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