CMSD2004S Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CMSD2004S type is a dual, in series silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING CODE: B6D SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0µs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VR VRRM IRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 300 300 200 225 625 4.0 1.0 275 -65 to +150 455 V V m A m A m A A A m W °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS UNITS IR IR BVR VF CT trr VR=240V 100 n A VR=240V, TA=150°C 100 µA IR=100µA 300 V IF=100m A 1.0 VR=0, f=1.0MHz 5.0 p F IF=IR=30m A, Irr=3.0m A, RL=100Ω 50 ns R7 (11-December 2023) CMSD2004S SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: B6D w w w. c e n t r a l s e m i . c o m R7 (11-December 2023) OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered...