MLSM CMSD2004S
Switching Diodes
FEATURES
CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. Power dissipation 3 B6D SOT-23 top view CMSD2004S Switching Diodes Schematic diagram 1 2 Marking and pin assignmentMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter VRM VR IF Io IFRM IFSM PD RθJA TJ , TSTG Non-Repetitive Peak Reverse Voltage Reverse Voltage Forward Current Average Rectified Output Current Peak Repetitive Forward Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Operating and Storage Temperature Range Value 300 240 225 200 625 2.5 250 500 -55~ +150 Unit V V mA mA mA A mW ℃/W ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Symbol Parameter V(BR) Reverse voltage IR Reverse current VF Forward voltage CD Diode capacitance trr Reverse recovery time Condition IR=100μA VR=240V IF=100mA VR=0, f=1MHz IF= IR =30m...