CMSD2004S Datasheet | MLS Microelectronics

Features CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. Power dissipation B6D SOT-23 top view Switching Diodes Schematic diagram Marking and pin assignment Maximum Ratings(Ta=25℃ unless otherwise noted) Symbol Parameter VRM VR IF Io IFRM IFSM PD RθJA TJ , TSTG Non-Repetitive Peak Reverse Voltage Reverse Voltage Forward Current Average Rectified Output Current Peak Repetitive Forward Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Operating and Storage Temperature Range Value 300 240 225 200 625 2.5 250 500 -55~ +150 Unit V V m A m A m A A m W ℃/W ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Symbol Parameter V(BR) Reverse voltage Reverse current Forward voltage Diode capacitance trr Reverse recovery time Condition IR=100μA VR=240V IF=100m A VR=0, f=1MHz IF= IR =30m A,RL=100Ω Min 240 ----- Typ ------ Max -0.1 1 5...