CMSD2004S
CMSD2004S is SWITCHING DIODE manufactured by JCET.
FEATURES
CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. Power dissipation
SOT-23
MARKING : B6D
B6D
B6D
Solid dot = Green molding pound device, if none, the normal device
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage DC Blocking Voltage $YHUDJH5HFWLILHG 2XWSXW Current Continuous Forward Current Peak Repetitive Forward Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance From Junction to Ambient Junction Temperature Storage Temperature Range
Symbol
VRM VR IO IF IFRM IFSM PD RθJA
TJ TSTG
Limit
300 240
200 225 625
2.5 250 500 150 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time
V(BR) IR VF CD trr
IR= 100μA VR=240V IF=100m A VR=0V f=1MHz IF=IR=30m A,RL=100Ω
Unit
V V m A m A m A A m W ℃/W ℃ ℃
Max
Unit
0.1 μA 1V 5 p F 50 ns
.cj-elec.
D,Dec,2015
Typical Characteristics
Forward Characteristics...
