JCET CMSD2004S
SWITCHING DIODE
| Part No. | CMSD2004S |
|---|---|
| Datasheet | CMSD2004S Download |
| Manufacturer |  JCET |
| Description | SWITCHING DIODE |
| Buy | Stock & Price |
FEATURES
CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. Power dissipation SOT-23 MARKING : B6D 1 B6D B6D Solid dot = Green molding compound device, if none, the normal device 2 3MAXIMUM RATINGS
@Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage $YHUDJH 5HFWLILHG 2XWSXW Current Continuous Forward Current Peak Repetitive Forward Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance From Junction to Ambient Junction Temperature Storage Temperature Range Symbol VRM VR IO IF IFRM IFSM PD RθJA TJ TSTG Limit 300 240 200 225 625 2.5 250 500 150 -55~+150ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time V(BR) IR VF CD trr IR= 100μA VR=240V IF=100mA VR=...
