Datasheet Details
| Part number | CMXDM7002A |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 704.47 KB |
| Description | DUAL N-CHANNEL MOSFET |
| Datasheet | CMXDM7002A_CentralSemiconductorCorp.pdf |
|
|
Overview: CMXDM7002A SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET SOT-26 CASE w w w. c e n t r a l s e m i .
| Part number | CMXDM7002A |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 704.47 KB |
| Description | DUAL N-CHANNEL MOSFET |
| Datasheet | CMXDM7002A_CentralSemiconductorCorp.pdf |
|
|
|
: The CENTRAL SEMICONDUCTOR CMXDM7002A is special dual version of the 2N7002 enhancementmode N-Channel MOSFET manufactured by the N-Channel DMOS Process, and designed for high speed pulsed amplifier and driver applications.
This special dual transistor device offers low rDS(ON) and low VDS(ON).
MARKING CODE: X02A MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA 60 60 40 280 280 1.5 1.5 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IGSSF, IGSSR VGS=20V, VDS=0 100 IDSS VDS=60V, VGS=0 1.0 IDSS VDS=60V, VGS=0, TJ=125°C 500 ID(ON) VGS=10V, VDS=10V 500 BVDSS VGS=0, ID=10μA 60 VGS(th) VDS=VGS, ID=250μA 1.0 2.5 VDS(ON) VGS=10V, ID=500mA 1.0 VDS(ON) VGS=5.0V, ID=50mA 0.15 VSD VGS=0, IS=400mA 1.2 rDS(ON) VGS=10V, ID=500mA 2.0 rDS(ON) VGS=10V, ID=500mA, TJ=125°C 3.5 rDS(ON) VGS=5.0V, ID=50mA 3.0 rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C 5.0 gFS VDS=10V, ID=200mA 80 Crss VDS=25V, VGS=0, f=1.0MHz 5.0 Ciss VDS=25V, VGS=0, f=1.0MHz 50 Coss VDS=25V, VGS=0, f=1.0MHz 25 UNITS V V V mA mA A A mW °C °C/W UNITS nA μA μA mA V V V V V Ω Ω Ω Ω mS pF pF pF R3 (9-February 2015) CMXDM7002A SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS Qg(tot) VDS=30V, VGS=4.5V, ID=100mA 0.592 nC Qgs VDS=30V, VGS=4.5V, ID=100mA 0.196 nC Qgd VDS=30V, VGS=4.5V, ID=100mA 0.148 nC ton, toff VDD=30V, VGS=10V,
Compare CMXDM7002A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| CMXD2004 | SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE |
| CMXD2004TO | SUPERminiTM TRIPLE ISOLATED OPPOSING SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE |
| CMXD4448 | SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT HIGH SPEED SWITCHING DIODE |
| CMXD6001 | SUPERmini. TRIPLE ISOLATED SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE |
| CMXSH-3 | SCHOTTKY DIODE |
| CMXT2222A | SURFACE MOUNT DUAL NPN SILICON TRANSISTOR |
| CMXT2907A | SURFACE MOUNT DUAL PNP SILICON TRANSISTOR |
| CMXT3904 | SURFACE MOUNT DUAL NPN SILIOCON TRANSISTOR |
| CMXT3906 | DUAL PNP SILIOCON TRANSISTOR |
| CMXT7090L | SURFACE MOUNT LOW VCE SAT PNP POWER TRANSISTOR |