Datasheet Details
| Part number | CMXSH-3 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 649.29 KB |
| Description | SCHOTTKY DIODE |
| Datasheet | CMXSH-3_CentralSemiconductorCorp.pdf |
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Overview: CMXSH-3 SURFACE MOUNT SILICON TRIPLE ISOLATED SCHOTTKY DIODE SOT-26 CASE w w w. c e n t r a l s e m i .
| Part number | CMXSH-3 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 649.29 KB |
| Description | SCHOTTKY DIODE |
| Datasheet | CMXSH-3_CentralSemiconductorCorp.pdf |
|
|
|
: The CENTRAL SEMICONDUCTOR CMXSH-3 contains three (3) isolated silicon Schottky switching diodes, manufactured by the epitaxial planar process, epoxy molded in an SOT-26 surface mount package, and designed for applications requiring low forward voltage drop MARKING CODE: XH3 MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA 30 100 350 750 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=25V 90 500 IR VR=25V, TA=100°C 25 100 BVR IR=100μA 30 VF IF=2.0mA 0.29 0.33 VF IF=15mA 0.37 0.45 VF IF=100mA 0.51 1.00 CJ VR=1.0V, f=1.0MHz 7.0 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 UNITS V mA mA mA mW °C °C/W UNITS nA μA V V V V pF ns R6 (11-February 2016) CMXSH-3 SURFACE MOUNT SILICON TRIPLE ISOLATED SCHOTTKY DIODE SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: XH3 w w w.
c e n t r a l s e m i .
c o m R6 (11-February 2016) CMXSH-3 SURFACE MOUNT SILICON TRIPLE ISOLATED SCHOTTKY DIODE TYPICAL ELECTRICAL CHARACTERISTICS w w w.
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