Datasheet Details
| Part number | CMXT2222A |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 212.52 KB |
| Description | SURFACE MOUNT DUAL NPN SILICON TRANSISTOR |
| Datasheet | CMXT2222A_CentralSemiconductorCorp.pdf |
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Overview: CMXT2222A SURFACE MOUNT DUAL NPN SILICON TRANSISTORS SOT-26 CASE w w w. c e n t r a l s e m i .
| Part number | CMXT2222A |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 212.52 KB |
| Description | SURFACE MOUNT DUAL NPN SILICON TRANSISTOR |
| Datasheet | CMXT2222A_CentralSemiconductorCorp.pdf |
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: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for small signal general purpose and switching applications.
MARKING CODE: X1P MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 75 40 6.0 600 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO ICBO ICEV IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE fT Cob Cib hie hie VCB=60V VCB=60V, TA=125°C VCE=60V, VEB=3.0V VEB=3.0V IC=10μA IC=10mA IE=10μA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz 75 40 6.0 0.6 35 50 75 100 50 40 300 2.0 0.25 10 10 10 10 0.3 1.0 1.2 2.0 300 8.0 25 8.0 1.25 UNITS nA μA nA nA V V V V V V V MHz pF pF kΩ kΩ R3 (12-February 2010) CMXT2222A SURFACE MOUNT DUAL NPN SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS hre VCE=10V, IC=1.0mA, f=1.0kHz hre VCE=10V, IC=10mA, f=1.0kHz 8.0 x10-4 4.0 x10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 μS hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 μS rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 ps NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz
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