Datasheet Details
| Part number | CMXT3906 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 405.39 KB |
| Description | DUAL PNP SILIOCON TRANSISTOR |
| Datasheet | CMXT3906_CentralSemiconductorCorp.pdf |
|
|
Overview: CMXT3906 SURFACE MOUNT DUAL PNP SILICON TRANSISTORS SOT-26 CASE w w w. c e n t r a l s e m i .
| Part number | CMXT3906 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 405.39 KB |
| Description | DUAL PNP SILIOCON TRANSISTOR |
| Datasheet | CMXT3906_CentralSemiconductorCorp.pdf |
|
|
|
: The CENTRAL SEMICONDUCTOR CMXT3906 type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, and designed for small signal general purpose amplifier and switching applications.
MARKING CODE: X2A MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 40 40 5.0 200 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob Cib hie VCE=30V, VEB=3.0V IC=10μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA VCE=20V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz 40 40 5.0 0.65 60 80 100 60 30 250 2.0 50 0.25 0.40 0.85 0.95 300 4.5 12 12 UNITS nA V V V V V V V MHz pF pF kΩ R4 (16-March 2020) CMXT3906 SURFACE MOUNT DUAL PNP SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS hre VCE=10V, IC=1.0mA, f=1.0kHz 0.1 10 x10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 100 400 hoe VCE=10V, IC=1.0mA, f=1.0kHz 3.0 60 μS NF VCE=5.0V, IC=100μA, RS=1.0kΩ, f=10Hz to 15.7kHz 4.0 dB td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 35 ns 35 ns 225 ns 75 ns SOT-26 CASE - MECHANICAL OUTLINE w w w.
c e n t r a l s e m i .
Compare CMXT3906 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| CMXT3904 | SURFACE MOUNT DUAL NPN SILIOCON TRANSISTOR |
| CMXT2222A | SURFACE MOUNT DUAL NPN SILICON TRANSISTOR |
| CMXT2907A | SURFACE MOUNT DUAL PNP SILICON TRANSISTOR |
| CMXT7090L | SURFACE MOUNT LOW VCE SAT PNP POWER TRANSISTOR |
| CMXD2004 | SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE |
| CMXD2004TO | SUPERminiTM TRIPLE ISOLATED OPPOSING SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE |
| CMXD4448 | SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT HIGH SPEED SWITCHING DIODE |
| CMXD6001 | SUPERmini. TRIPLE ISOLATED SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE |
| CMXDM7002A | DUAL N-CHANNEL MOSFET |
| CMXSH-3 | SCHOTTKY DIODE |