Datasheet Details
| Part number | CXT2222A |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 103.46 KB |
| Description | SURFACE MOUNT NPN SILICON TRANSISTOR |
| Datasheet | CXT2222A_CentralSemiconductorCorp.pdf |
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Overview: CXT2222A SURFACE MOUNT NPN SILICON TRANSISTOR Central TM Semiconductor Corp.
| Part number | CXT2222A |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 103.46 KB |
| Description | SURFACE MOUNT NPN SILICON TRANSISTOR |
| Datasheet | CXT2222A_CentralSemiconductorCorp.pdf |
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: The CENTRAL SEMICONDUCTOR CXT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications.
SOT-89 CASE MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA UNITS V V V mA W °C °C/W 75 40 6.0 600 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO IEBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE fT Cob Cib TEST CONDITIONS VCB=60V VCB=60V, TA=125°C VEB=3.0V VCE=60V, VEB=3.0V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz MIN MAX 10 10 10 10 UNITS nA µA nA nA V V V V V V V 75 40 6.0 0.6 35 50 75 100 50 40 300 0.3 1.0 1.2 2.0 300 MHz pF pF 8.0 25 R3 ( 19-December 2001) Central TM CXT2222A SURFACE MOUNT NPN SILICON TRANSISTOR Semiconductor Corp.
ELECTRICAL CHARACTERISTICS (Continued) SYMBOL hie hie hre hre hfe hfe hoe hoe rb’Cc NF td tr ts tf TEST CONDITIONS VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCB=10V, IE=20mA, f=31.8MHz VCE=10V, IC=100µA, RS=1.0kΩ, f=1.0kHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA MIN 2.0 0.25 50 75 5.0 25 MAX 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 10
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