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CXT2907A Datasheet Surface Mount PNP Silicon Transistor

Manufacturer: Central Semiconductor

Overview: CXT2907A SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR CXT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications.

MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 60 5.0 600 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=50V ICBO VCB=50V, TA=125°C ICEV VCE=30V, VBE=0.5V BVCBO IC=10µA 60 BVCEO IC=10mA 60 BVEBO IE=10µA 5.0 VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA 75 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=150mA 100 MAX 10 10 50 0.4 1.6 1.3 2.6 300 UNITS V V V mA W °C °C/W UNITS nA µA nA V V V V V V V R7 (23-February 2010) CXT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hFE VCE=10V, IC=500mA 50 fT VCE=20V, IC=50mA, f=100MHz 200 Cob VCB=10V, IE=0, f=1.0MHz 8.0 Cib VBE=2.0V, IC=0, f=1.0MHz 30 ton VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 45 td VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 10 tr VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 40 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ts VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 tf VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 SOT-89 CASE - MECHANICAL OUTLINE UNITS MHz pF pF ns ns ns ns ns ns (Bottom View) w w w.

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