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CZT2000 Datasheet NPN Silicon Extremely High Voltage Darlington Transistor

Manufacturer: Central Semiconductor

Overview: CZT2000 SURFACE MOUNT SILICON EXTREMELY HIGH VOLTAGE NPN DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR CZT2000 is an NPN epitaxial planar silicon darlington transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability.

MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VEBO IC PD TJ, Tstg ΘJA 200 200 10 600 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=180V IEBO VBE=10V BVCES IC=1.0mA 200 VCE(SAT) IC=20mA, IB=25µA VCE(SAT) IC=80mA, IB=40µA VCE(SAT) IC=160mA, IB=100µA VBE(ON) VCE=5.0V, IC=160mA hFE VCE=5.0V, IC=100µA 3000 hFE VCE=5.0V, IC=10mA 3000 hFE VCE=5.0V, IC=160mA 3000 MAX 500 100 0.9 1.1 1.2 2.0 UNITS V V V mA W °C °C/W UNITS nA nA V V V V V R8 (7-May 2019) CZT2000 SURFACE MOUNT SILICON EXTREMELY HIGH VOLTAGE NPN DARLINGTON TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --- 0.45 --- 0.000 0.004 0.00 0.10 10° 10° 0.009 0.014 0.23 0.35 0.248 0.270 6.30 6.85 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R5) w w w.

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