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CZT2000 - PNP Silicon Extremely High Voltage Darlington Transistor

Key Features

  • 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 123 2.9 4.6 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Symbol VCBO VCEO VEBO IC PD TJ,Tstg ÈJA Rating 200 200 10 600 2 -65 to 150 62.5 Unit V V V mA W /W Electrical Characteristics Ta = 25 Symbol ICBO IEBO BVCES VCE(SAT) V.

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Datasheet Details

Part number CZT2000
Manufacturer Kexin Semiconductor
File Size 30.51 KB
Description PNP Silicon Extremely High Voltage Darlington Transistor
Datasheet download datasheet CZT2000 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Transistors PNP Silicon Extremely High Voltage Darlington Transistor CZT2000 SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 123 2.9 4.6 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Symbol VCBO VCEO VEBO IC PD TJ,Tstg ÈJA Rating 200 200 10 600 2 -65 to 150 62.5 Unit V V V mA W /W Electrical Characteristics Ta = 25 Symbol ICBO IEBO BVCES VCE(SAT) VCE(SAT) VCE(SAT) VBE(ON) hFE Testconditons VCB=180V VBE=10V IC=1.