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1N5525B - SILICON ZENER DIODES

This page provides the datasheet information for the 1N5525B, a member of the 1N5518B SILICON ZENER DIODES family.

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications.

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Datasheet preview – 1N5525B

Datasheet Details

Part number 1N5525B
Manufacturer Central Semiconductor
File Size 130.14 KB
Description SILICON ZENER DIODES
Datasheet download datasheet 1N5525B Datasheet
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Full PDF Text Transcription

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1N5518B THRU 1N5546B SILICON ZENER DIODES 400mW, 3.3 THRU 33 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX V V V Test Current IZT mA Maximum Zener Impedance (Note 1) ZZT @ IZT Ω Maximum Reverse Current IR @ VR μA V 1N5518B 3.135 3.3 3.465 20 26 5.0 1.0 1N5519B 3.420 3.6 3.780 20 24 3.0 1.0 1N5520B 3.705 3.9 4.
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