Datasheet4U Logo Datasheet4U.com

1N5553 Datasheet Glass Passivated Silicon Rectifiers

Manufacturer: Central Semiconductor

Overview: 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i .

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general purpose applications where high reliability is required.

MARKING: FULL PART NUMBER GPR-4AM CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 1N5550 1N5551 1N5552 1N5553 1N5554 UNITS Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V Average Forward Current (TA=55°C) IO 3.0 A Peak Forward Surge Current, tp=8.3ms IFSM 100 A Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance (Note 1) ΘJL 30 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=Rated VRRM 1.0 IR VR=Rated VRRM, TA=100°C 75 VF IF=3.0A (200V thru 600V) 1.0 VF IF=3.0A (800V thru 1000V) 1.1 BVR IR=50µA (1N5550) 240 BVR IR=50µA (1N5551) 460 BVR IR=50µA (1N5552) 660 BVR IR=50µA (1N5553) 880 BVR IR=50µA (1N5554) 1100 trr IF=0.5A, IR=1.0A, Irr=0.25A (200V thru 600V) 2.0 trr IF=0.5A, IR=1.0A, Irr=0.25A (800V thru 1000V) 4.0 Notes: (1) At 0.375 inch (9.52mm) lead length from body.

UNITS µA µA V V V V V V V µs µs R3 (17-April 2023) 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT GPR-4AM CASE - MECHANICAL OUTLINE Notes: (2) Solder fillets may or may not be present at one or both leads where leads attach to the package body.

1N5553 Distributor