DESCRIPTION
: MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS
: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 60 30 5.0 800 500 1.2 -65 to +200 350 146 ELECTRICAL CHARACTERISTICS
: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=50V - ICBO VCB=50V, TA=150°C - IEBO VEB=3.0V - BVCBO IC=10μA 60 BVCEO IC=10mA 30 BVEBO IE=10μA 5.0 VCE(SAT) IC=150mA, IB=15mA - VCE(SAT) IC=500mA, IB=50mA - VBE(SAT) IC=150mA, IB=15mA 0.6 VBE(SAT) IC=500mA, IB=50mA - fT VCE=20V, IC=20mA, f=100MHz 250 Cob VCB=10V, IE=0, f=100kHz - Cib VEB=0.5V, IC=0, f=100kHz - MAX 10 10 10 0.4 1.6 1.3 2.6 8.0 30 UNITS V V V mA mW W °C °C/W °C/W UNITS nA μA nA V V V V V V V MHz pF pF R2 (24-July 2013) 2N2221 2N2222 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS
- Conti...
Central Semiconductor
