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2N2480A Datasheet Dual NPN Transistors

Manufacturer: Central Semiconductor

Overview: 2N2480 2N2480A SILICON DUAL NPN TRANSISTORS w w w. c e n t r a l s e m i .

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

: The CENTRAL SEMICONDUCTOR 2N2480 and 2N2480A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO 75 40 5.0 Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) IC 500 PD 300 PD 600 Operating and Storage Junction Temperature TJ, Tstg -65 to +200 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) 2N2480 2N2480A SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO ICBO IEBO BVCBO VCB=60V VCB=30V, TA=150°C VEB=5.0V IC=100μA - 50 - 15 - 50 75 - - 20 - 15 - 20 80 - BVCEO BVEBO VCE(SAT) VBE(SAT) IC=20mA IE=100μA IC=50mA, I

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