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2N2920 Datasheet Dual NPN Transistors

Manufacturer: Central Semiconductor

Overview: 2N2920 2N2920A SILICON DUAL NPN TRANSISTORS w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Power Dissipation (One Die, TC=25°C) Power Dissipation (Both Dice, TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD PD PD TJ, Tstg 60 60 6.0 30 300 500 750 1.5 -65 to +200 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=45V 2.0 ICEO VCE=5.0V 2.0 IEBO VEB=5.0V 2.0 BVCBO IC=10μA 60 BVCEO IC=10mA 60 BVEBO

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