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2N2920 Datasheet NPN Dual Silicon Transistor

Manufacturer: VPT

Overview: 2N2919, 2N2919L, 2N2919U 2N2920, 2N2920L, 2N2920U NPN Dual Silicon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/355.
  • TO-78 and U package types.
  • Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Collector - Base Cutoff Current Test Conditions VCB = 70 V dc Symbol Units Min. ICBO1 µA dc.
  • Max. 10 Emitter - Base Cutoff Current Breakdown Voltage, Collector-Emitter VEB = 6 V dc IC = 10 mA dc IEBO1 µA dc.
  • 10 V(BR)C.

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More Datasheets from VPT

Part Number Description
2N2920L NPN Dual Silicon Transistor
2N2920U NPN Dual Silicon Transistor
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