• Part: 2N2929
  • Description: PNP Transistor
  • Manufacturer: Motorola Semiconductor
  • Size: 121.41 KB
Download 2N2929 Datasheet PDF
2N2929 page 2
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Datasheet Summary

2N2929 (GERMANIUM) PNP germanium epitaxial mesa transistor for low noise, broadband, power and driver amplifier applications. CASE 31 (TO-S) Collector connected to else MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C JW1ction Temperature storage Temperature Range Symbol VCB VCES VCEO VEB Ie TJ Tstg Value 25 25 10 0.75 100 300 4.0 750 10 100 -65 to +100 Unit Vdc Vdc Vdc Vde mAde mW mW/oC mW mW/oC °c °c NORMALIZED DC CURRENT GAIN CHARACTERISTICS .....--- " TJ - ~5'C / ,/'...