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2N2929 (GERMANIUM)
PNP germanium epitaxial mesa transistor for low noise, broadband, power and driver amplifier applications.
CASE 31
(TO-S)
Collector connected to else MAXIMUM RATINGS
Rating Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
JW1ction Temperature
storage Temperature Range
Symbol VCB VCES VCEO VEB
Ie
PD
PD
TJ Tstg
Value 25 25 10 0.75 100 300 4.0
750 10 100 -65 to +100
Unit
Vdc Vdc
Vdc
Vde mAde mW mW/oC
mW mW/oC
°c
°c
NORMALIZED DC CURRENT GAIN CHARACTERISTICS
1.2
1.0
.....--- " TJ - ~5'C /
,/' /
..... 1--''''.....
/
-~ i'.. I': l.
/ ~ , / TJ = 25'C
~~
/V
~
1
0.
2N2929 Datasheet
