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2N2927 - PNP Transistor

Download the 2N2927 datasheet PDF. This datasheet also covers the 2N2696 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N2696-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2696 (SILICON) 2N2927 PNP SILICON ANNULAR TRANSISTORS designed for use in medium-speed, non-saturated switching applications_ • High Collector-Emitter Breakdown Voltage - = = BVCEO 25 Vdc @IC 100/!Adc • High Collector-Base Breakdown Voltage BVCBO = 25 Vdc@ IC = 100/!Adc MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Sase Voltage Emitter-Base Voltage Collector Current -'Continuous Total Device Dissipation@TA = 25°C Derate above 25°C Total Device Dissipation @Te= 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VeEO VeB VEB Ie Po Po TJ,Tstg 2N2696 2N2927 25 25 4.0 500 0.36 0.8 2.06 4_56 1.2 3.0 6.85 17.1 -65 to +200 Unit Vde Vde Vde mAde Watts mW/oe Watts mW/oe °e *tndicates JEOeC Registered Data.