Datasheet Details
| Part number | 2N3507 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 146.74 KB |
| Description | NPN SILICON TRANSISTOR |
| Datasheet | 2N3507 2N3506 Datasheet (PDF) |
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Overview: DATA SHEET 2N3506 2N3507 NPN SILICON TRANSISTOR JEDEC TO-39 CASE.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N3507 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 146.74 KB |
| Description | NPN SILICON TRANSISTOR |
| Datasheet | 2N3507 2N3506 Datasheet (PDF) |
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: The CENTRAL SEMICONDUCTOR 2N3506, 2N3507 types are Silicon NPN Epitaxial Planar Transistors designed for general purpose switching applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL 2N3506 2N3507 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance VCBO VCEO VEBO IC PD PD TJ,Tstg ΘJA ΘJC 60 80 ` 40 50 5.0 3.0 1.0 5.0 -65 to +200 175 35 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS 2N3506 MIN MAX 2N3507 MIN MAX ICEV ICEV ICEV ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VCE=40V, VEB(off)=4.0V VCE=40V, VEB(off)=4.0V, TA=100°C VCE=60V, VEB(off)=4.0V VCE=60V, VEB(off)=4.0V, TA=100°C IC=100µA IC=10mA IE=10µA IC=500mA, IB=50mA IC=1.5A, IB=150mA IC=2.5A, IB=250mA IC=500mA, IB=50mA IC=1.5A, IB=150mA IC=2.5A, IB=250mA 1.0 150 60 40 5.0 0.5 1.0 1.5 1.0 0.9 1.4 2.0 1.0 150 80 50 5.0 0.5 1.0 1.5 1.0 0.9 1.4 2.0 UNITS V V V A W W °C °C/W °C/W UNITS µA µA µA µA V V V V V V V V V (Continued) R1 2N3506 / 2N3507 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CONTINUED (TA=25°C unless otherwise noted) SYMBOL hFE hFE hFE hFE fT Cob Cib td tr ts tf TEST CONDITIONS VCE=1.0V, IC=500mA VCE=2.0V, IC=1.5A VCE=3.0V, IC=2.5A VCE=5.0V, IC=3.0A VCE=5.0V, IC=100mA, f=20MHz VCB=10V, IE=0, f=100kHz VBE=3.0V, IC=0, f=100kHz VCC=30V, IC=1.5A, IB1=150mA VCC=30V, IC=1.5A, IB1=150mA VCC=30V, IC=1.5A, IB1=IB2=150mA VCC=30V, IC=1.5A, IB1=IB2=150mA 2N3506 MIN MAX 50 40 200 30 25 60 40 300 15 30 55 35 2N3507 MIN MAX 35 30 150 25 20 60 40 300 15 30 55 35 TO-39 PACKAGE - MECHANICAL OUTLINE UNITS MHz pF pF ns ns ns ns A B D C E LEAD #2 LEAD #1 45° I F G H LEAD #3 J R1 SYMBOL A (DIA) B (DIA) C D E F (DIA) G (DIA) H I J DIMENSIONS INCHES MILLIMET
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3507 | NPN MEDIUM POWER SILICON TRANSISTOR | Microsemi |
 |
2N3507 | Silicon NPN Transistor | Semicoa Semiconductor |
| Solid State | 2N3507 | SWITCHING TRANSISTOR | Solid State |
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2N3507 | SWITCHING TRANSISTOR | Motorola |
|
2N3507A | NPN MEDIUM POWER SILICON TRANSISTOR | Microsemi |
| Part Number | Description |
|---|---|
| 2N3504 | Small Signal Transistors |
| 2N3505 | Small Signal Transistors |
| 2N3506 | NPN SILICON TRANSISTOR |
| 2N3545 | Small Signal Transistors |
| 2N3546 | Small Signal Transistors |
| 2N3547 | Small Signal Transistors |
| 2N3548 | Small Signal Transistors |
| 2N3549 | Small Signal Transistors |
| 2N3550 | Small Signal Transistors |
| 2N3563 | Silicon Transistors |