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2N3507 - NPN MEDIUM POWER SILICON TRANSISTOR

This page provides the datasheet information for the 2N3507, a member of the 2N3506 NPN MEDIUM POWER SILICON TRANSISTOR family.

Product Overview

Microsemi

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2N3507 NPN MEDIUM POWER SILICON TRANSISTOR by Microsemi - Datasheet Preview — Datasheet preview – 2N3507

Datasheet Details

Part number	2N3507
Manufacturer	Microsemi
File Size	264.88 KB
Description	NPN MEDIUM POWER SILICON TRANSISTOR
Datasheet	2N3507 Datasheet
Additional preview pages of the 2N3507 datasheet.

2N3507 Product details

Description

This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage.

These devices are also available in TO-5 and low profile U4 packaging.

Features

JEDEC registered 2N3506 through 2N3507A series.
RoHS compliant versions available (commercial grade only).
VCR(sat) = 0.5 V @ IC = 500 mA.
Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.

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Other Datasheets by Microsemi

2N3507A - NPN MEDIUM POWER SILICON TRANSISTOR
2N3507AL - NPN MEDIUM POWER SILICON TRANSISTOR
2N3507L - NPN MEDIUM POWER SILICON TRANSISTOR
2N3500 - NPN SILICON SWITCHING TRANSISTOR
2N3500L - NPN SILICON SWITCHING TRANSISTOR
2N3501 - NPN SILICON SWITCHING TRANSISTOR
2N3501L - NPN SILICON SWITCHING TRANSISTOR
2N3506 - NPN MEDIUM POWER SILICON TRANSISTOR

Published: May 16, 2017 |