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2N3506L - NPN MEDIUM POWER SILICON TRANSISTOR

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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C (1) @ TC = 25°C (2) Operating & Storage Temperature Range Note: 1) Derate linearly 5.71 mW/°C for TA > +25°C 2) Derate linearly 55.5 mW/°C for TC > +25°C Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3506 2N3507 40 50 60 80 5.0 3.0 1.0 5.