2N3506L
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //.microsemi.
TECHNICAL DATA SHEET
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349
DEVICES
2N3506 2N3506A 2N3506L 2N3506AL
2N3507 2N3507A 2N3507L 2N3507AL
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (1) @ TC = 25°C (2)
Operating & Storage Temperature Range
Note:
1) Derate linearly 5.71 m W/°C for TA > +25°C 2) Derate linearly 55.5 m W/°C for TC > +25°C
Symbol VCEO VCBO VEBO IC
Top, Tstg
2N3506 2N3507
1.0 5.0
-65 to +200
Unit Vdc Vdc Vdc Adc
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10m Adc
Collector-Emitter Cutoff Current VCE = 40Vdc...
