VPT 2N3501
NPN Medium Power Silicon Transistor
| Part No. | 2N3501 |
|---|---|
| Datasheet | 2N3501 Download |
| Manufacturer |  VPT |
| Description | NPN Medium Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/366● TO-39 (TO-205AD) and TO-5 Leaded Packages
● 2N3501 Available In UB package
● Ideal for High Voltage Inductive Load Switching
APPLICATIONS
Rev. V3ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage IC = 10 mA dc 2N3498, 2N3499 2N3500, 2N3501, 2N3501UB V(BR)CEO V dc 100 150 Collector - Base Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current Emitter - Base Cutoff Current VCB = 100 V dc 2N3498, 2N3499 VCB = 150 V dc 2N3500, 2N3501 2N3501UB VCB = 50 V dc 2N3498, 2N3499 VCB = 75 V dc 2N3500, 2N3501 2N3501UB VEB = 6.0 V dc VEB = 4.0 V dc ICBO1 µA dc — ICBO2 nA dc — IEBO1 µA dc — IEBO2 nA dc — Max. — 10 50 10 25 Collector - Emitter Saturation Voltage IC = 10 mA dc; IB = 1 mA dc VCE(SAT)1 V dc — 0.2 Collector - Emitter Saturation Voltage IC = 150 mA dc; IB = 15 mA dc (2N3500, 2N3501, 2N3501B only) VCE(...
