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2N3501 Datasheet PDF

Seme LAB 2N3501

NPN SILICON TRANSISTOR

Part No. 2N3501
Datasheet 2N3501 Download
Manufacturer
Seme LAB
Description NPN SILICON TRANSISTOR
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2N3501 datasheet page 1 preview

MECHANICAL DATA

Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN SILICON TRANSISTOR 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 5.08 (0.200) typ. 2 1 3 2.54 (0.100)

FEATURES

● NPN High Voltage Planar Transistor
● Hermetic TO39 Package
● Full Screening Options Available 45° TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 150V VCEO Collector – Emitter Voltage (IB = 0) 150V VEBO Emitter – Base Voltage (IB = 0) 6V IC Collector Current 300mA PD Total Device Dissipation TA = 25 °C 1W PD Derate above 25°C 5.71mW / °C Tstg Storage Temperature –65 to 200°C Rja Thermal Resistance Junction to Ambient 175°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press.
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