Datasheet4U Logo Datasheet4U.com

2N3634 Datasheet Silicon PNP Transistors

Manufacturer: Central Semiconductor

Overview: 2N3634 2N3635 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications.

MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 140 140 5.0 1.0 1.0 5.0 -65 to +200 175 35 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=100V IEBO VEB=3.0V BVCBO IC=100μA 140 BVCEO IC=10mA 140 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA 0.65 fT VCE=30V, IC=30mA, f=100MHz (2N3634) 150 fT VCE=30V, IC=30mA, f=100MHz (2N3635) 200 Cob VCB=20V, IE=0, f=1.0MHz Cib VEB=1.0V, IC=0, f=1.0MHz NF VCE=10V, IC=0.5mA, RS=1.0kΩ, f=1.0kHz ton VCC=100V, VBE=4.0V, IC=50mA toff IB1=IB2=5.0mA MAX 100 50 0.3 0.5 0.8 0.9 10 75 3.0 400 600 UNITS V V V A W W °C °C/W °C/W UNITS nA nA V V V V V V V MHz MHz pF pF dB ns ns R1 (17-September 2013) 2N3634 2N3635 SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N3634 2N3635 SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, IC=0.1mA 40 - 80 - hFE VCE=10V, IC=1.0mA 45 - 90 - hFE VCE=10V, IC=10mA 50 - 100 - hFE VCE=10V, IC=50mA 50 150 100 300 hFE VCE=10V, IC=150mA 25 - 50 - hfe VCE=10V, IC=10mA, f=1.0kHz 40 160 80 320 TO-39 CASE - MECHANICAL OUTLINE w w w.

c e n t r a l s e m i .

2N3634 Distributor