| Part Number | 2N3634 |
|---|---|
| Manufacturer | onsemi |
| Overview |
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
Low Power Transistors
PNP Silicon
Features
• MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC
MAXIMUM RATIN.
* MIL *PRF *19500/357 Qualified * Available as JAN, JANTX, JANTXV and JANHC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol 2N3634/L 2N3636/L 2N3635/L 2N3637/L Unit Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current * Continuous VC. |
2N3634 Datasheet
The 2N3634 is a Low Power Transistors.
| Part Number | 2N3634 |
|---|---|
| Description | SILICON PNP TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXI. A, f=100MHz (2N3635) 200 Cob VCB=20V, IE=0, f=1.0MHz Cib VEB=1.0V, IC=0, f=1.0MHz NF VCE=10V, IC=0.5mA, RS=1.0kΩ, f=1.0kHz ton VCC=100V, VBE=4.0V, IC=50mA toff IB1=IB2=5.0mA MAX 100 50 0.3 0.5 0.8 0.9 10 75 3.0 400 600 UNITS V V V A W W °C °C/W °C/W UNITS nA nA V V V V V V V MHz MHz pF p. |
| Part Number | 2N3634 |
|---|---|
| Description | PNP Radiation Hardened Amplifier |
| Manufacturer | VPT Components |
| Overview |
2N3634 - 2N3637 Series
PNP Radiation Hardened Amplifier
Rev. V2
Features
• Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/357
• Ideal for General Purpose Switching and Amplifier Applica.
* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/357 * Ideal for General Purpose Switching and Amplifier Applications * Available in TO-5, TO-39, UB and UBN packages Electrical Characteristics Parameter Off Characteristics Collector - Base Cutoff Current Voltage Collector - Emitter Brea. |
| Part Number | 2N3634 |
|---|---|
| Description | PNP Transistor |
| Manufacturer | SEMICOA |
| Overview |
Type 2N3634
Geometry TBD Polarity PNP Qual Level: Pending
Features:
• General-purpose low-power amplifier transistor which operates over a wide temperature range.
• Housed in a TO-39 case. • Also will.
* General-purpose low-power amplifier transistor which operates over a wide temperature range. * Housed in a TO-39 case. * Also will be available in chip form using the TBD chip geometry. * The Min and Max limits shown are per MIL-PRF-19500/357 which Semicoa meets in all cases. Data Sheet No. 2N36. |