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2N3739 Datasheet NPN Power Transistor

Manufacturer: Central Semiconductor

Overview: 2N3738 2N3739 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i .

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

: The CENTRAL SEMICONDUCTOR 2N3738 and 2N3739 are silicon epitaxial NPN power transistors designed for high voltage amplifier applications.

MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD TJ, Tstg JC 2N3738 250 2N3739 325 225 300 6.0 1.0 2.0 0.5 1.0 20 -65 to +200 7.5 UNITS V V V A A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=250V, VBE=1.5V (2N3738) ICEV VCE=300V, VBE=1.5V (2N3739) ICEV VCE=125V, VBE=1.5V, TC=100°C (2N3738) ICEV VCE=200V, VBE=1.5V, TC=100°C (2N3739) ICEO VCE=125V (2N3738) ICEO VCE=200V (2N3739) IEBO VEB=6.0V BVCEO IC=5.0mA, (2N3738) 225 BVCEO IC=5.0mA, (2N3739) 300 VCE(SAT) IC=250mA, IB=25mA VBE(ON) VCE=10V, IC=100mA hFE VCE=10V, IC=50mA 30 hFE VCE=10V, IC=100mA 40 hFE VCE=10V, IC=250mA 25 hfe VCE=20V, IC=100mA, f=1.0kHz 35 fT VCE=10V, IC=100mA, f=10MHz 10 Cob VCB=100V, IE=0, f=100kHz MAX 0.1 0.5 0.5 1.0 1.0 0.25 0.25 0.1 2.5 1.0 200 20 UNITS mA mA mA mA mA mA mA mA V V V V MHz pF R1 (2-September 2014) 2N3738 2N3739 SILICON NPN POWER TRANSISTOR TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER w w w.

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