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2N3739 - NPN silicon power transistors

Download the 2N3739 datasheet PDF. This datasheet also covers the 2N3738 variant, as both devices belong to the same npn silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3738-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N3739 NPN POWER TRANSISTOR Central Semiconductor
2N3739 Bipolar NPN Device Seme LAB
2N3733 RF & MICROWAVE TRANSISTORS Microsemi Corporation
2N3733 RF & MICROWAVE TRANSISTORS New Jersey Semi-Conductor
2N3734 Bipolar NPN Device Seme LAB

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3733 NPN silicon transistor
2N3734 GENERAL PURPOSE TRANSISTOR
2N3736 GENERAL PURPOSE TRANSISTOR
2N3738 NPN silicon power transistors
2N3712 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3738 (SILICON) 2N3739 ~ CASE 80 ~ (TO-66) Collector connected to case High-voltage NPN silicon power transistors, designed for use in line operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays, featuring excellent dc gain. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Base Voltage VCB 2N3738 2N3739 Unit 250 325 Vdc Emitter-Base Voltage Collector-Emitter Voltage VEB VCEO 6.0 6.0 Vdc 225 300 Vdc Collector Current (Continuous) IC Collector Current (Peak) IC 3.0 Adc 3.0 Amp Base Current IB 1.0 Amp Total Device Dissipation @ T C = 250 C Derate above 250 C PD 20 0.133 Watts wloc Thermal Resistance Junction Operating and Storage Temperature Range °JC TJ, Tstg 7.