Motorola 2N3739
NPN silicon power transistors
| Part No. | 2N3739 |
|---|---|
| Datasheet | 2N3739 Download |
| Manufacturer |  Motorola |
| Description | NPN silicon power transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Rating Symbol Collector-Base Voltage VCB 2N3738 2N3739 Unit 250 325 Vdc Emitter-Base Voltage Collector-Emitter Voltage VEB VCEO 6.0 6.0 Vdc 225 300 Vdc Collector Current (Continuous) IC Collector Current (Peak) IC 3.0 Adc 3.0 Amp Base Current IB 1.0 Amp Total Device Dissipation @ T C = 250 C Derate above 250 C PD 20 0.133 Watts wloc Thermal Resistance Junction Operating and Storage Temperature Range °JC TJ, Tstg 7.5 -65 to +175 °C/W °c 20 ~ 16 ~ z >0~= 12 ~8 is f5 ~4 ...Q. o o POWER●TEMPERATURE DERATING CURVE " ............ .............. ......... ~ .............. .............. ............. .............. ......... ~ .............. 25 50 75 100 125 150 175 Tc. CASE TEMPERATURE (DC) 2-578 2N3738, 2N3739 (continued)ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) I Characteristic Symbol OFF CHARACTERISTICS IMin IMax I Unit Collector-Emitter Sustaining Voltage (1) (IC = 5 mAdc, IB = 0) Emitter-Base Cutoff Current (VEB = 6...
