Datasheet4U Logo Datasheet4U.com

2N3819 - SILICON N-CHANNEL JFET

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3819 SILICON N-CHANNEL JFET w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Drain-Source Voltage Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDG VDS VGS IG PD TJ, Tstg 25 25 25 10 360 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSS VGS=15V IGSS VGS=15V, TA=100°C IDSS VDS=15V 2.0 BVGSS IG=1.0μA 25 VGS(OFF) VDS=15V, ID=2.0nA VGS |Yfs| |Yfs| |Yos| VDS=15V, ID=200μA VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=100MHz VDS=15V, VGS=0, f=1.0kHz 0.5 2.0 1.