The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N3819
SILICON N-CHANNEL JFET
w w w. c e n t r a l s e m i . c o m
The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Drain-Source Voltage Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature
SYMBOL VDG VDS VGS IG PD
TJ, Tstg
25 25 25 10 360 -65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSS
VGS=15V
IGSS
VGS=15V, TA=100°C
IDSS
VDS=15V
2.0
BVGSS
IG=1.0μA
25
VGS(OFF) VDS=15V, ID=2.0nA
VGS
|Yfs| |Yfs| |Yos|
VDS=15V, ID=200μA VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=100MHz VDS=15V, VGS=0, f=1.0kHz
0.5 2.0 1.