Datasheet Details
| Part number | 2N4104 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 531.73 KB |
| Description | NPN SILICON TRANSISTOR |
| Datasheet |
 2N4104 Datasheet
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| Part number | 2N4104 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 531.73 KB |
| Description | NPN SILICON TRANSISTOR |
| Datasheet |
2N4104 Datasheet
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: The CENTRAL SEMICONDUCTOR 2N4104 type is an NPN silicon transistor designed for Low-Noise amplifier applications.
MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL UNITS VCBO 60 V VCEO 60 V VEBO 7.5 V IC 50 mA PD 300 mW TJ, Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) hFE hFE hFE hFE hie hfe hre hoe fT Cob Cib VCB=45V, IE=0 10 nA VCB=45V, IE=0, TA=150°C 10 µA VEB=5.0V, IC=0 10 nA IC=10µA, IE=0 60 V IC=10mA, IB=0 60 V IE=10µA, IC=0 7.5 V IC=1.0mA, IB=100µA 0.3 V VCE=5.0V, IC=100µA 0.7 V VCE=5.0V, IC=1.0µA 150 VCE=5.0V, IC=10µA 400 800 VCE=5.0V, IC=100µA 450 VCE=5.0V, IC=1.0mA 500 VCE=5.0V, IC=1.0mA, f=1kHz 12 42 kΩ VCE=5.0V, IC=1.0mA, f=1kHz 500 1400 VCE=5.0V, IC=1.0mA, f=1kHz 8x10-4 VCE=5.0V, IC=1.0mA, f=1kHz 8.0 60 umhos VCE=5.0V, IC=0.5mA, f=30MHz 90 540 MHz VCB=5.0V, IE=0, f=1.0MHz 4.5 pF VEB=0.5V, IC=0, f=1.0MHz 6.0 pF R0 (10-May 2022) 2N4104 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) (continued) SYMBOL TEST CONDITIONS MIN MAX NF VCE=5.0V, IC=30µA, f=10Hz, RG=10kΩ 15 NF VCE=5.0V, IC=30µA, f=100Hz, RG=10kΩ 4.0 NF VCE=5.0V, IC=5µA, f=1kHz, RG=50kΩ 1.0 NF VCE=5.0V, IC=5µA, f=10kHz, RG=50kΩ 1.0 TO-18 CASE - MECHANICAL OUTLINE UNITS dB dB dB dB w w w.
c e n t r a l s e m i .
2N4104 NPN SILICON TRANSISTOR w w w.
c e n t r a l s e m i .
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|---|---|
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