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2N4871 - SILICON PN UNIJUNCTION TRANSISTORS

Download the 2N4871 datasheet PDF. This datasheet also covers the 2N4870 variant, as both devices belong to the same silicon pn unijunction transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR 2N4870 and 2N4871 are silicon PN unijunction transistors designed for oscillator, triggering and timing applications.

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Note: The manufacturer provides a single datasheet file (2N4870-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Central Semiconductor

Part Number Description
2N4870 SILICON PN UNIJUNCTION TRANSISTORS
2N4851 (2N4851 - 2N4853) PN SILICON UNIJUNCTION TRANSISTOR
2N4852 (2N4851 - 2N4853) PN SILICON UNIJUNCTION TRANSISTOR
2N4853 (2N4851 - 2N4853) PN SILICON UNIJUNCTION TRANSISTOR
2N4856 N-CHANNEL SILICON JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4870 2N4871 SILICON PN UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4870 and 2N4871 are silicon PN unijunction transistors designed for oscillator, triggering and timing applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Emitter Reverse Voltage SYMBOL VB2E Interbase Voltage VB2B1 RMS Emitter Current Ie Peak Emitter Current (Duty Cycle ≤1%, PRR=10pps) ie RMS Power Dissipation PD Operating Junction Temperature TJ Storage Temperature Tstg 30 35 1.5 1.0 300 -65 to +125 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS VB2B1=10V RBB VB2B1=3.0V IEB2O VB2E=30V IV VB2B1=20V, RB2=100Ω IP VB2B1=25V VOB1 V1=20V 2N4870 MIN MAX 0.56 0.75 4.0 9.1 - 1.0 2.0 - - 5.0 3.