2N4871 Datasheet PDF

DESCRIPTION

: A PN unijunction transistor in a TO–92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Absolute maximum Ratings: (Ta = +25°C unless otherwise specified) Power Dissipation, Pd Derate Above 25°C RMS Emitter Current, Ie(rms) Peak Pulse Emitter Current (Note 1) Current, ie Emitter Reverse Voltage, Vb2e Interbase Voltage, Vb2b1 Operating Junction Temperature Range, Tj Storage Temperature Range, Tstg : 300mW : 3.0mW/°C : 50mA : 1.5A : 30V : 35V : -65°C to +125°C : -65°C to +150°C

ELECTRICAL CHARACTERISTICS

: (Ta = +25ºC Unless otherwise specified) Parameter Instrinsic Standoff Ratio Symbol Test Conditions Vb2b1 = 10V, Note3 Min 0.70 Interbase Resistance rbb 4.0 Interbase Resistance Temperature Coefficient 0.1 Emitter Saturation Voltage Modulated interbase Current Veb1(sat) Ib2(mod) Vb2b1 = 10V, Ie = 50mA, Note 4 Vb2b1 = 10V, Ie = 50mA - Emitter Reverse Current