Central Semiconductor 2N4906
The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.2N4906 Specifications
- Package : TO-3
- Mount Type : Through Hole
- Polarity : PNP
- Max Collector Current : 5A
- Collector Emitter Voltage : 80V
- Max Power Dissipation : 87.5W
Source:
Octopart
| Part No. | 2N4906 |
|---|---|
| Datasheet | 2N4906 Download |
| Manufacturer |  Central Semiconductor |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
DESCRIPTION
: MARKING: FULL PART NUMBER TO-3 CASEMAXIMUM RATINGS
: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N4904 2N4913 40 2N4905 2N4914 60 2N4906 2N4915 80 40 60 80 5.0 5.0 1.0 87.5 -65 to +200 2.0ELECTRICAL CHARACTERISTICS
: (TC=25°C unless otherwise noted) PNP SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=Rated VCBO - 0.1 ICEO VCE=Rated VCEO - 1.0 ICEV VCE=Rated VCEO, VBE=1.5V - 0.1 ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C - 2.0 IEBO VEB=5.0V - 1.0 BVCEO IC=200mA (2N4904, 2N4913) 40 - BVCEO IC=200mA (2N4905, 2N4914) 60 - BVCEO IC=200mA (2N4906, 2N4915) 80 - VCE(SAT) IC=2.5A, IB=250mA - 1.0 VCE(SAT) IC=5.0A, IB=1.0A - 1.5 VBE(ON) VCE=2.0V, IC=2.5A - 1.4 hFE VCE=2.0V, IC=2.5A 25 100 hFE VCE=2.0V, IC=5.0A 7.0 - hfe VCE=10V, IC=500mA, f=1.0kHz 40 - fT VCE=10V, IC=1.0A, f=1.0MHz 4.