2N4906 - SILICON EPITAXIAL PNP TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N4906
Manufacturer	TT Electronics
File Size	182.04 KB
Description	SILICON EPITAXIAL PNP TRANSISTOR
Datasheet	2N4906 Datasheet

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SILICON EPITAXIAL PNP TRANSISTOR 2N4906 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -80V VCEO Collector – Emitter Voltage -80V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -5A IB Base Current -1.0A PD Total Power Dissipation at TC = 25°C 87.5W Derate Above 25°C 0.5W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max.