| Part Number | 2N4906 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching app. 50°C - 2.0 IEBO VEB=5.0V - 1.0 BVCEO IC=200mA (2N4904, 2N4913) 40 - BVCEO IC=200mA (2N4905, 2N4914) 60 - BVCEO IC=200mA (2N4906, 2N4915) 80 - VCE(SAT) IC=2.5A, IB=250mA - 1.0 VCE(SAT) IC=5.0A, IB=1.0A - 1.5 VBE(ON) VCE=2.0V, IC=2.5A - 1.4 hFE VCE=2.0V, IC=2.5A 25 100 hFE VCE=2. |
2N4906 Datasheet and Specifications PDF
The 2N4906 is a COMPLEMENTARY SILICON POWER TRANSISTORS.
| Part Number | 2N4906 Datasheet |
|---|---|
| Description | Bipolar PNP Device |
| Manufacturer | Seme LAB |
| Overview | 2N4906 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.. . |
| Part Number | 2N4906 Datasheet |
|---|---|
| Description | PNP power transistors |
| Manufacturer | Motorola Semiconductor |
| Overview | 2N4904 (SILICON) 2N4905 2N4906 PNP power transistors for use in power amplifier and ,Switching circuits. Complement to NPN 2N4913 thru 2N4915. CASE 11 (TO·3) MAXIMUM RATINGS Rating Collector-Emitte. f Current (VCE = Rated VCEO' VBE(oll) = 1. S Vde) 5,6 (VCE = Rated VCEO' VBE(olf) = 1. 5 Vde, TC = 1S0°C) ICEX - - 0.1 2.0 Collector Cutoff Current (VCB = Rated VCB' IE = 0) ICBO - 0.1 Emitter Cutoff Current (VBE = S. 0 Vde, IC = 0) lEBO - 1.0 ON CHARACTERISTICS 111 DC Current Gain (I. |
| Part Number | 2N4906 Datasheet |
|---|---|
| Description | SILICON EPITAXIAL PNP TRANSISTOR |
| Manufacturer | TT Electronics |
| Overview | SILICON EPITAXIAL PNP TRANSISTOR 2N4906 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Option. . |