2N5415
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and industrial line-operated applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=175V
ICBO
VCB=280V
ICEV
VCE=200V, VEB=1.5V
ICEV
VCE=300V, VEB=1.5V
ICEO
VCE=150V
ICEO
VCE=250V
IEBO
VEB=4.0V
IEBO
VEB=6.0V
BVCEO
IC=50m A
BVCER
IC=50m A, RBE=50Ω
VCE(SAT) IC=50m A, IB=5.0m A
VBE(SAT) IC=50m A, IB=5.0m A h FE VCE=10V, IC=50m A hfe VCE=10V, IC=5.0m A, f=1.0k Hz f T VCE=10V, IC=10m A, f=5.0MHz
Cob VCB=10V, IE=0, f=1.0MHz
SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg
2N5415 200
2N5416 350
200 300
4.0...
