2N5416 Datasheet | Central Semiconductor

2N5415 2N5416 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and industrial line-operated applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=175V ICBO VCB=280V ICEV VCE=200V, VEB=1.5V ICEV VCE=300V, VEB=1.5V ICEO VCE=150V ICEO VCE=250V IEBO VEB=4.0V IEBO VEB=6.0V BVCEO IC=50m A BVCER IC=50m A, RBE=50Ω VCE(SAT) IC=50m A, IB=5.0m A VBE(SAT) IC=50m A, IB=5.0m A h FE VCE=10V, IC=50m A hfe VCE=10V, IC=5.0m A, f=1.0k Hz f T VCE=10V, IC=10m A, f=5.0MHz Cob VCB=10V, IE=0, f=1.0MHz SYMBOL VCBO VCEO VEBO IC IB PD TJ,...