NXP Semiconductors 2N5416
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | 2N5416 |
|---|---|
| Datasheet | 2N5416 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP high-voltage transistors |
| Buy | Stock & Price |
FEATURES
● Low current (max. 200 mA)● High voltage (max. 300 V).
APPLICATIONS
● Switching and linear amplification in military, industrial and consumer equipment. 1 handbook, halfpage 2N5415; 2N5416 PINNING PIN 1 2 3 emitter base collector, connected to caseDESCRIPTION
DESCRIPTION
PNP high-voltage transistor in a TO-39 metal package. 3 2 2 3 MAM334 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N5415 2N5416 VCEO collector-emitter voltage 2N5415 2N5416 ICM Ptot hFE peak collector current total power dissipation DC current gain 2N5415 2N5416 fT transition frequency IC = −10 mA; VCE = −10 V; f = 5 MHz Tamb ≤ 50 °C IC = −50 mA; VCE = −10 V 30 30 15 150 120 − MHz open base − − − − −200 −300 400 1 V V mA W open emitter − − −200 −350 V V CONDITIONS MIN. MAX. UNIT 1997 May 21 2 Philips Semiconductors Product specification PNP high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
