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2N5416 - SILICON PNP TRANSISTORS

Download the 2N5416 datasheet PDF. This datasheet also covers the 2N5415 variant, as both devices belong to the same silicon pnp transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5415-TT.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by TT Electronics

Part Number Description
2N5415 SILICON PNP TRANSISTORS
2N5154T2A SILICON EPITAXIAL NPN TRANSISTOR
2N5154X-220M SILICON NPN POWER TRANSISTOR
2N5320 SILICON PLANAR EPITAXIAL NPN TRANSISTOR
2N5333 SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP TRANSISTORS 2N5415 / 2N5416 Hermetic TO-39 Metal Package. High Voltage Ideally Suited As Drivers In High Voltage Low Current Inverters, Switching and Series Regulators. High Reliability Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Symbols Parameters VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current – Continuous IB Base Current PD Total Power Dissipation at TA= 25°C Derate Above 25°C TJ Junction Temperature Range Tstg Storage Temperature Range 2N5415 2N5416 -200V -350V -200V -300V -4V -6V -1.0A -0.5A 1.0W 5.71mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max.