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2N5460 - SILICON P-CHANNEL JFETS

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2N5461 SILICON P-CHANNEL JFETS
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2N5460 2N5461 2N5462 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N5460, 2N5461, and 2N5462 are silicon P-Channel JFETs designed for low level amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Reverse Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDG VGSR IG PD TJ, Tstg 40 40 10 310 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5460 2N5461 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 5.0 - 5.0 IGSS VGS=20V, TA=100°C - 1.0 - 1.0 IDSS VDS=15V, f=1.0kHz 1.0 5.0 2.0 9.0 BVGSS IG=10μA 40 - 40 - VGS VDS=15V, ID=0.1mA 0.5 4.0 - - VGS VDS=15V, ID=0.